Noble gas effect on ACL etching selectivity to SiO<sub>2</sub> films
نویسندگان
چکیده
In this study, we investigated the effect of Ar/He mixing ratio in tetrafluoromethane/perfluorocyclobutane/Ar/He gas mixture on plasma parameters, SiO2 etching kinetics, and selectivity with respect to amorphous carbon layer (ACL) mask inductively coupled system low frequency (2 MHz) bias source. It was found that type dominant carrier does influence output process characteristics through changes both ion flux CFx/F determining polymerizing ability. particular, He-rich plasmas exhibited better performance faceting ACL SiO2/ACL selectivity.
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ژورنال
عنوان ژورنال: Plasma Processes and Polymers
سال: 2023
ISSN: ['1612-8869', '1612-8850']
DOI: https://doi.org/10.1002/ppap.202300026